Talk:High-electron-mobility transistor

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Diagram[edit]

We need a diagram of a standard HEMT device and not just a PHEMT. Would someone be able to produce this? Mike 09:07, 21 May 2007 (UTC)[reply]

splitup of article Field effect transistor in progress, please see Talk:Field effect transistor Pjacobi 15:34, 19 Jul 2004 (UTC)

Done Pjacobi 21:29, 19 Jul 2004 (UTC)

The External Link in this article seems to be dead.

Gololo 21:27, 29 Nov 2006

History[edit]

Can anyone add a section on the history of the HEMT and in particular who lays claim to it - I believe it was a chap at Fujitsu. History of HEMT Transistors http://eesof.tm.agilent.com/docs/iccap2002/MDLGBOOK/7DEVICE_MODELING/3TRANSISTORS/0History/HEMTHistory.pdf Which says "Dr. Takashi Mimura, the inventor of HEMT, is currently a fellow of Fujitsu Laboratories."

But elsewhere there were scientists working on GaAs MODFETs and devices with various other names. I recall Linh Nuyen who founded Picogiga published papers on his TEGFET transistors when he was at Thomson CSF the French electronics company.

Linh Nuyen, the Company's Chairman and CEO, was the co-inventor of the High Electron Mobility Transistor ("HEMT").

http://compoundsemiconductor.net/cws/article/news/6174

http://www.freepatentsonline.com/EP1192665.html

IEEE Transactions on Electron Devices, vol. ED-29, No. 6, June 1982, D. Delagebeaudeuf and N. T. Linh, "Metal-(n) AlGaAs-GaAs two-dimensional electron gaz FET", pp. 955-960 describing the operation of a TEGFET and IEEE Transactions on Electron Devices, vol. 35, No. 7, July 1988, M. C. Foisy et al., "The role of inefficient charge modulation in limiting the current-gain cutoff frequency of the MODFET", pp. 871-878 describing the operation of a MODFET. http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=9&f=G&l=50&co1=AND&d=PTXT&s1=linh&s2=hemt&OS=linh+AND+hemt&RS=linh+AND+hemt

http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1482310

Royzee (talk) 15:35, 29 February 2008 (UTC)[reply]

(Nuyen Trong Linh (talk) 22:13, 13 December 2008 (UTC))[reply]

Who is the inventor of the so-called HEMT

Thank you, Royzsee for having recalled my name. I am NUYEN TRONG LINH, mostly known in the scientific communitty as Dr Linh since I usually wrote my name Nuyen T. Linh.

I claim to be with my colleague Daniel DELAGEBEAUDEUF the inventors of the so-called HEMT : we filed for a patent of this device on the 28th of March 1979 in France (Patent n° 79 07803: "Transistor à effet de champ à fréquence de coupure élevée") and this patent has been approved on the 24th of October 1980 under the Patent n° FR2452791(A1) (please, try to access this information through the data base FR-esp@cenet. Note that the internal procedure at our company, Thomson-CSF took six months since we submitted our patent to the "Intellectual property Department" of the company in October 1978.

By that time I was Head of the Microwave Devices Department (Laboratoire de Composants Hyperfréquences) and Daniel Delagebeaudeuf is one of the senior scientists of my group. Our team at Thonson-CSF published our first paper on this device in the spring of 1980 in the magazine Electronics Letters, n°26, p.667(1980) with the title :"Two-dimensional gas MESFET structure". While our paper was under press, T. Mimura and his Fujitsu colleagues independently announced their High Electron Mobilty Transistor in the magazine Japanese Journal of Applied Phycics Letters, n°19, p.L 225 (1980). The Fujitsu team got the experimental data few weeks ahead of the Thomson-CSF's. But we were the first in the semiconductor world to get a propagation delay time below 20 picoseconds at room temperature, and to announce microwave performance.

Since this spring of 1980 to the end of 1985, the two teams Thonson-CSF and Fujitsu, fiercy but friendly competed. And more and more private or public laboratories join the "competition fiesta". The atmosphere was excellent since there was room for many of us from fundamental physics to practical applications.

Thirty years after the invention of this exceptional electronic device which strongly contributed to the success of the Iinformation Technology world, I am proud for having contributed into three basic matters :

1) I predicted that the reduced dimensionality of the electron gas enhances the performance of the electronic device, that is why I called this device a two-dimensional electron gas field effect Transistor (TEGFET). This was the starting point of the man made crystal, the Nanotechnology in Electronics.

2) I have promoted this technology for the microwave applications, instead of logic applications, with a clear view the present world in communications (which was the far future by that time) : satellite TV and cellular telephone... I clearly showed this future at all my talks during the early 1980's particularly the Plenary Lectures of the Divisions Semiconductor Physics of the German Physical Society hold in Freudenstadt March 1983 (Festkörper Probleme XXIII Advanced in Solid State Physics, published in Vieweg), whom I am indebted for the invitation.

3) To accelerate the maturation of this technology, I took the incredible risk to found my own company and supplied the multilayers wafers to all companies who needed. How happy I was when the TV satellite dishes appeared in Japan during the Olympic games of 1988!

Now I am ready to contribute to any matters concerning the TEGFET or HEMT, not only technical matters. What about writing a book on this story which leads to three Nobel Prizes and some millionnaires (that is not the most important) and to a deep change of the world ?

(Nuyen Trong Linh (talk) 21:20, 13 December 2008 (UTC))[reply]

Your name has been misspelt in the patent and literature, which contributes the less attention you should deserve for this invention. Let the world know that your name is Nguyễn Trọng Linh and should not be misspelt. 220.228.146.11 (talk) 21:52, 12 August 2023 (UTC)[reply]

Proposed merge with MODFET[edit]

The following discussion is closed. Please do not modify it. Subsequent comments should be made in a new section. A summary of the conclusions reached follows.

Merge as there is consensus that the terms are synonyms.

The first sentence of MODFET says that it is a synonym of HEMT ... the first sentence of this HEMT article says that it is a synonym of MODFET ... so it seems to me that the two articles ought to be merged. Do other people agree?

I'm not an expert in this area so I would have a hard time merging myself ... I'm hoping someone else volunteers ... :-) --Steve (talk) 20:30, 20 November 2012 (UTC)[reply]

Support as synonyms. Andy Dingley (talk) 22:44, 29 December 2015 (UTC)[reply]
Oppose until we have clearer argument and evidence that they are the same. ((re)Splitting is MUCH harder than merging) Talk:MODFET implies one may be subset of the other. Can we ask an expert who has contributed to both articles ? What is the history of the two terms ? Different developers ? Different structures ? Different materials ? - Rod57 (talk) 02:52, 2 January 2016 (UTC)[reply]
google of the two terms together find docs that all seem to treat them as synonyms. ( MODFET 40k, HEMT 483k => common name is HEMT ) - Rod57 (talk) 03:28, 2 January 2016 (UTC)[reply]

The discussion above is closed. Please do not modify it. Subsequent comments should be made on the appropriate discussion page. No further edits should be made to this discussion.