Talk:Ruthenium

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Good articleRuthenium has been listed as one of the Natural sciences good articles under the good article criteria. If you can improve it further, please do so. If it no longer meets these criteria, you can reassess it.
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April 20, 2010Good article nomineeListed

References[edit]

  • Chemistry of precious metals by Simon Cotton
  • Elements of Metallurgy and Engineering Alloys by F. C. Campbell
  • The radiochemistry of ruthenium by Edward I. Wyatt, Robert R. Rickard
  • Electronic Materials Handbook by Merrill L. Minges
  • doi:10.1007/BF00701448 An evaluation of some commercial thick film resistor materials for strain gauges

Microelectronics[edit]

We can do better than the following. Readers come to this overview of an entire element to get a sense of reality not promises. "Ruthenium has been suggested as a material that could beneficially replace other metals and silicides in microelectronics components. Ruthenium tetroxide (RuO4) is highly volatile, as is ruthenium trioxide (RuO3) (IT IS NOT).[1] By oxidizing ruthenium (for example with an oxygen plasma) into the volatile oxides, ruthenium can be easily patterned.[2][3][4] The properties of the common ruthenium oxides make ruthenium a metal compatible with the semiconductor processing techniques needed to manufacture microelectronics.

To continue miniaturization of microelectronics, new materials are needed as dimensions change. There are three main applications for thin ruthenium films in microelectronics. The first is using thin films of ruthenium as electrodes on both sides of tantalum pentoxide (Ta2O5) or barium strontium titanate ((Ba, Sr)TiO3, also known as BST) in the next generation of three-dimensional dynamic random access memories (DRAMs).[5][6][7]

Ruthenium thin-film electrodes could also be deposited on top of lead zirconate titanate (Pb(ZrxTi1−x)O3, also known as PZT) in another kind of RAM, ferroelectric random access memory (FRAM).[8][9] Platinum has been used as the electrodes in RAMs in laboratory settings, but it is difficult to pattern. Ruthenium is chemically similar to platinum, preserving the function of the RAMs, but in contrast to Pt patterns easily. The second is using thin ruthenium films as metal gates in p-doped metal-oxide-semiconductor field effect transistors (p-MOSFETs).[10] When replacing silicide gates with metal gates in MOSFETs, a key property of the metal is its work function. The work function needs to match the surrounding materials. For p-MOSFETs, the ruthenium work function is the best materials property match with surrounding materials such as HfO2, HfSiOx, HfNOx, and HfSiNOx, to achieve the desired electrical properties. The third large-scale application for ruthenium films is as a combination adhesion promoter and electroplating seed layer between TaN and Cu in the copper dual damascene process.[11][12][13][14][15] Copper can be directly electroplated onto ruthenium,[16] in contrast to tantalum nitride. Copper also adheres poorly to TaN, but well to Ru. By depositing a layer of ruthenium on the TaN barrier layer, copper adhesion would be improved and deposition of a copper seed layer would not be necessary.

There are also other suggested uses. In 1990, IBM scientists discovered that a thin layer of ruthenium atoms created a strong anti-parallel coupling between adjacent ferromagnetic layers, stronger than any other nonmagnetic spacer-layer element. Such a ruthenium layer was used in the first giant magnetoresistive read element for hard disk drives. In 2001, IBM announced a three-atom-thick layer of the element ruthenium, informally referred to as "pixie dust", which would allow a quadrupling of the data density of current hard disk drive media.[17]" --Smokefoot (talk) 21:15, 17 January 2022 (UTC)[reply]

References

  1. ^ Pan, Wei; Desu, S. B. (1997). "Reactive Ion Etching of RuO2 Films: The Role of Additive Gases in O2 Discharge". Physica Status Solidi A. 161 (1): 201–215. Bibcode:1997PSSAR.161..201P. doi:10.1002/1521-396X(199705)161:1<201::AID-PSSA201>3.0.CO;2-U.
  2. ^ Lesaicherre, P.-Y.; Yamamichi, S.; Yamaguchi, H.; Takemura, K.; Watanabe, H.; Tokashiki, K.; Satoh, K.; Sakuma, T.; Yoshida, M.; Ohnishi, S.; Nakajima, K.; Shibahara, K.; Miyasaka, Y.; Ono, H. (1994). "A Gbit-scale DRAM stacked capacitor with ECR MOCVD SrTiO3 over RIE patterned RuO2/TiN storage nodes". Proceedings of 1994 IEEE International Electron Devices Meeting. pp. 831–834. doi:10.1109/IEDM.1994.383296. ISBN 978-0-7803-2111-3. S2CID 113907761.
  3. ^ Pan, Wei (November 1994). "Reactive Ion Etching of RuO2, Thin-Films Using the Gas-Mixture O2 CF3CFH2". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12 (6): 3208–3213. Bibcode:1993JElS..140.2635V. doi:10.1116/1.587501.
  4. ^ Saito, Shinji; Kuramasu, Keizaburo (15 January 1992). "Plasma etching of RuO2 thin films". Japanese Journal of Applied Physics. 31 (Part 1, No. 1): 135–138. Bibcode:1992JaJAP..31..135S. doi:10.1143/JJAP.31.135.
  5. ^ Aoyama, Tomonori; Eguchi, Kazuhiro (1 October 1999). "Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium". Japanese Journal of Applied Physics. 38 (Part 2, No. 10A): L1134–L1136. Bibcode:1999JaJAP..38L1134A. doi:10.1143/JJAP.38.L1134.
  6. ^ Iizuka, Toshihiro; Arita, Koji; Yamamoto, Ichiro; Yamamichi, Shintaro; Yamaguchi, Hiromu; Matsuki, Takeo; Sone, Shuji; Yabuta, Hisato; Miyasaka, Yoichi; Kato, Yoshitake (30 April 2000). "Low Temperature Recovery of Ru/(Ba, Sr)TiO 3 /Ru Capacitors Degraded by Forming Gas Annealing". Japanese Journal of Applied Physics. 39 (Part 1, No. 4B): 2063–2067. Bibcode:2000JaJAP..39.2063I. doi:10.1143/JJAP.39.2063.
  7. ^ Yamamichi, S.; Lesaicherre, P.; Yamaguchi, H.; Takemura, K.; Sone, S.; Yabuta, H.; Sato, K.; Tamura, T.; Nakajima, K.; Ohnishi, S.; Tokashiki, K.; Hayashi, Y.; Kato, Y.; Miyasaka, Y.; Yoshida, M.; Ono, H. (July 1997). "A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO3 and RuO2/Ru/TiN/TiSix storage nodes for Gb-scale DRAM's". IEEE Transactions on Electron Devices. 44 (7): 1076–1083. Bibcode:1997ITED...44.1076Y. doi:10.1109/16.595934.
  8. ^ Bandaru, Jordana; Sands, Timothy; Tsakalakos, Loucas (15 July 1998). "Simple Ru electrode scheme for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors directly on silicon". Journal of Applied Physics. 84 (2): 1121–1125. Bibcode:1998JAP....84.1121B. doi:10.1063/1.368112.
  9. ^ Maiwa, Hiroshi; Ichinose, Noboru; Okazaki, Kiyoshi (30 September 1994). "Preparation and Properties of Ru and R u O 2 Thin Film Electrodes for Ferroelectric Thin Films". Japanese Journal of Applied Physics. 33 (Part 1, No. 9B): 5223–5226. Bibcode:1994JaJAP..33.5223M. doi:10.1143/JJAP.33.5223.
  10. ^ Misra, Veena; Lucovsky, Gerry; Parsons, Gregory (March 2002). "Issues in High- ĸ Gate Stack Interfaces". MRS Bulletin. 27 (3): 212–216. doi:10.1557/mrs2002.73.
  11. ^ Chan, R.; Arunagiri, T. N.; Zhang, Y.; Chyan, O.; Wallace, R. M.; Kim, M. J.; Hurd, T. Q. (2004). "Diffusion Studies of Copper on Ruthenium Thin Film". Electrochemical and Solid-State Letters. 7 (8): G154. doi:10.1149/1.1757113.
  12. ^ Cho, Sung Ki; Kim, Soo-Kil; Han, Hee; Kim, Jae Jeong; Oh, Seung Mo (2004). "Damascene Cu electrodeposition on metal organic chemical vapor deposition-grown Ru thin film barrier". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22 (6): 2649–2653. Bibcode:2004JVSTB..22.2649C. doi:10.1116/1.1819911.
  13. ^ Chyan, Oliver; Arunagiri, Tiruchirapalli N.; Ponnuswamy, Thomas (2003). "Electrodeposition of Copper Thin Film on Ruthenium". Journal of the Electrochemical Society. 150 (5): C347. doi:10.1149/1.1565138.
  14. ^ Kwon, Oh-Kyum; Kwon, Se-Hun; Park, Hyoung-Sang; Kang, Sang-Won (2004). "PEALD of a Ruthenium Adhesion Layer for Copper Interconnects". Journal of the Electrochemical Society. 151 (12): C753. Bibcode:2004JElS..151C.753K. doi:10.1149/1.1809576.
  15. ^ Kwon, Oh-Kyum; Kim, Jae-Hoon; Park, Hyoung-Sang; Kang, Sang-Won (2004). "Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer". Journal of the Electrochemical Society. 151 (2): G109. Bibcode:2004JElS..151G.109K. doi:10.1149/1.1640633.
  16. ^ Moffat, T. P.; Walker, M.; Chen, P. J.; Bonevich, J. E.; Egelhoff, W. F.; Richter, L.; Witt, C.; Aaltonen, T.; Ritala, M.; Leskelä, M.; Josell, D. (2006). "Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing". Journal of the Electrochemical Society. 153 (1): C37. Bibcode:2006JElS..153C..37M. doi:10.1149/1.2131826.
  17. ^ Hayes, Brian (2002). "Terabyte Territory". American Scientist. 90 (3): 212. doi:10.1511/2002.9.3287.

Chemical combustion.[edit]

I read a while ago ruthenium will ignite methane gas. Any article to solidify this claim would be great. A fascinating property if it does. 24.244.23.239 (talk) 15:41, 27 August 2022 (UTC)[reply]

Quite a few articles at https://scholar.google.co.uk/scholar?hl=en&as_sdt=0%2C5&q=ruthenium+methane+combustion&oq=ruthenium+methane+c - a start to answering your question. Ben (talk) 16:54, 27 August 2022 (UTC)[reply]